SI7136DP-RC

www.DataSheet4U.com Si7136DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 2.0963 9.0488 8.0177 50.6165 Ambient 24.2344 m 558.7573 m 70.7495 m 1.4435 Case 2.3554 m 690.6627 m 1.6922 820.2806 m Case 136.5785 u 595.8486 u 9.9128 m 8.8712 m Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A Thermal Capacitance (Joules/°C) This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73741 Revision 16-Jan-06 www.vishay.com 1 Si7136DP_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CO...