SI7137DP

www.DataSheet.co.kr New Product Si7137DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES ID (A) - 60 - 60d - 60d d PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.00195 at VGS = - 10 V 0.0025 at VGS = - 4.5 V 0.0039 at VGS = - 2.5 V Qg (Typ.) 183 nC PowerPAK SO-8 Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III P-Channel Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G S 5.15 mm Adaptor Switch Battery Switch Load Switch G Bottom View D P-Channel MOSFET Ordering Information: Si7137DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit - 20 ± 12 - 60d - 42a, b - 33.7a, b - 100 - 60d - 5.6a, b - 50 125 104 66.6 6.25a, b 4.0a, b - 55 to 150 260 60d Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Case t ≤ 10 s Steady State Symbol RthJA Rth...