SI7220DN

Si7220DN Vishay Siliconix Dual N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 4.8 4.3 rDS(on) (W) 0.060 @ VGS = 10 V 0.075 @ VGS = 4.5 V Qg (Typ) 13 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space of An SO-8 While Thermally Comparable RoHS COMPLIANT APPLICATIONS D Synchronous Rectification D Primary Side Switch D1 D2 PowerPAK 1212-8 3.30 mm S1 1 2 G1 S2 3.30 mm 3 4 G2 D1 G1 G2 8 7 D1 D2 6 5 D2 Ordering Information: Si7220DN-T1—E3 (Lead (Pb)-Free) S1 N-Channel MOSFET S2 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c Conduction)a TA = 25_C TA = 70_C L = 0.1 0 1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IAS EAS IS PD TJ, Tstg 10 secs 60 "20 4.8 3.8 20 11 6.1 2.2 2.6 1.4 Steady State Unit V 3.4 2.7 A mJ 1.1 1.3 0.69 A W −55 to 150 260 _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 38 77 4.3 Maximum 48 94 5.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://...