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New Product
Si7272DP
Vishay Siliconix
Dual N-Channel 30-V (D-...
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New Product
Si7272DP
Vishay Siliconix
Dual N-Channel 30-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0093 at VGS = 10 V 0.0124 at VGS = 4.5 V ID (A)a 25 25 Qg (Typ.) 8.2
FEATURES
Halogen-free According to IEC 61249-2-21 TrenchFET® Power
MOSFET PWM Optimized
APPLICATIONS
System Power DC/DC
PowerPAK SO-8
D1 D2
6.15 mm
S1
1 2
5.15 mm
G1 S2
3 4
D1
G2
8 7
D1 D2
G1
6 5
D2
G2
Bottom View Ordering Information: Si7272DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source
Voltage Gate-Source
Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Source-Drain Current Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 30 ± 20 25a 25a 15b, c 12b, c 60 19 3.0b, c 22 14 3.6b, c 2.3b, c - 55 to 150 260 °C W A Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient
b, f
Symbol t ≤ 10 s Steady State RthJA RthJC
Typ. 26 4
Max. 35 5.5
Unit °C/W
Maximum Junction-to-Case (Drain)
Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8...
