www.DataSheet.co.kr
New Product
Si7288DP
Vishay Siliconix
Dual N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40...
www.DataSheet.co.kr
New Product
Si7288DP
Vishay Siliconix
Dual N-Channel 40-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) (Ω) 0.019 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A) 20 19 Qg (Typ.) 4.9
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Gen III Power
MOSFET PWM Optimized 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
APPLICATIONS
Backlight Inverter for LCD Displays DC/DC Converter
5.15 mm
6.15 mm
S1
1 2
G1 S2
D1
D2
3 4
D1
G2
8 7
D1 D2
G1
6 5
D2
G2
Bottom View Ordering Information: Si7288DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 40 ± 20 20 17 10a, b 8.2a, b 50 13 3.0a, b 10 5 15.6 10 3.6a, b 2.3a, b - 55 to 150 260 Unit V
Pulsed Drain Current Source-Drain Current Diode Current Single Pulse Avalanche Current Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta, e Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typ. 29...