SI7309DN

www.DataSheet.co.kr Si7309DN Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) 0.115 at VGS = - 10 V 0.146 at VGS = - 4.5 V ID (A)a -8 -8 Qg (Typ.) 14.5 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile APPLICATIONS PowerPAK 1212-8 CCFL inverter Class D-amp 3.30 mm S 3.30 mm S 1 2 3 S S G 4 G D 8 7 6 5 D D D Bottom View Ordering Information: Si7309DN-T1-E3 (Lead (Pb)-free) Si7309DN-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit - 60 ± 20 - 8a - 7.8 - 3.9b, c - 3.1b, c - 20 - 8a - 2.7b, c - 15 11 19.8 12.7 3.2b, c 2.1b, c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Width) Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Maximum Junction-to-Case (Drain) Junction-to-Ambienta, d Steady State Symbol RthJA RthJC Typical 31 5 Maximum 39 6.3 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" ...