SI7358ADP

www.DataSheet4U.com Si7358ADP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.0042 @ VGS = 10 V 0.0059 @ VGS = 4.5 V ID (A) 23 20 Qg (Typ) 30 5 30.5 D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS PowerPAK SO-8 D DC/DC Converters D Synchronous Rectifiers 6.15 mm S 1 2 S 3 S 5.15 mm D 4 D 8 7 D 6 D 5 D G G Bottom View Ordering Information: Si7358ADP-T1 Si7358ADP-T1—E3 (Lead (Pb)-Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Avalanche Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS PD TJ, Tstg 10 secs 30 "20 23 18 60 4.5 50 5.4 3.4 Steady State Unit V 14 11 A 1.6 1.9 1.2 −55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 73161 S-41959—Rev. A, 25-Oct-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 18 50 1.0 Maximum 23 65 1.5 Unit _C/W 1 DataSheet 4 ...