SI7392DP

Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.00975 at VGS = 10 V 0.01375 at VGS = 4.5 V ID (A) 15 13 PowerPAK SO-8 FEATURES Halogen-free According to IEC 61249-2-21 Definition Extremely Low Qgd for Low Switching Losses TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested 100 % UIS Tested Complaint to RoHS Directive 2002/95/EC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: Si7392DP-T1-E3 (Lead (Pb)-free) Si7392DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS High-Side DC/DC Conversion - Notebook - Server G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 15 12 9 7 Pulsed Drain Current IDM ± 50 Continuous Source Current (Diode Conduction)a IS 4.1 1.5 Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS 30 45 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 5 3.2 1.8 1.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Soldering Recommendations (Peak Temperature)b, c 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)a t ≤ 10 s Steady State RthJA 20...