www.DataSheet.co.kr
Si7414DN
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
ID (A)
8.7 7.3
rDS(on) (W)
0.025 @ VGS = 10 V 0.036 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKt 1212-8 Package with Low 1.07-mm Profile D PWM Optimized
APPLICATIONS
D Primary Side Switch D Synchronous Rectifier D Motor Drives
D
S 1 2 3 4 D 8 7 6 5 D D D S S G
PowerPAKt 1212-8
3.30 mm
3.30 mm
G
S N-Channel MOSFET
Bottom View
A.
N-Channel MOSFET
www.DataSheet.co.kr
Si7414DN
New Product
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
60
FEATURES
ID (A)
8.7 7.3
rDS(on) (W)
0.025 @ VGS = 10 V 0.036 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKt 1212-8 Package with Low 1.07-mm Profile D PWM Optimized
APPLICATIONS
D Primary Side Switch D Synchronous Rectifier D Motor Drives
D
S 1 2 3 4 D 8 7 6 5 D D D S S G
PowerPAKt 1212-8
3.30 mm
3.30 mm
G
S N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
60 "20 8.7
Steady State
Unit
V
5.6 4.4 30 A 1.3 19 18 mJ 1.5 0.8 β55 to 150 W _C
ID IDM IS IAS EAS
7.0
3.2
3.8 PD TJ, Tstg 2.0
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1β x 1β FR4 Board. Document Number: 71738 S-04764βRev. A, 08-Oct-01 www.vishay.com Steady State Steady State RthJA RthJC
Symbol
Typical
26 65 1.9
Maximum
33 81 2.4
Unit
_C/W
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Si7414DN
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (.