SI7456DDP

New Product N-Channel 100 V (D-S) MOSFET Si7456DDP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.023 at VGS = 10 V 100 0.024 at VGS = 7.5 V 0.031 at VGS = 4.5 V ID (A)a 27.8 27.2 24 Qg (Typ.) 9.7 nC PowerPAK® SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7456DDP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Primary Side Switch Telecom/Server 48 V, Full/Half-Bridge DC/DC Industrial Synchronous Rectification D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 300 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L =0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg Limit 100 ± 20 27.8 22.2 10.4b, c 8.2b, c 70 25 4.5b, c 15 11.2 35.7 22.8 5b, c 3.2b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-...