SI7469DP

New Product Si7469DP www.DataSheet4U.com Vishay Siliconix P-Channel 80-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 80 rDS(on) (Ω) 0.025 at VGS = - 10 V 0.029 at VGS = - 4.5 V ID (A)a - 28 - 28 Qg (Typ) 55 nC FEATURES TrenchFET® Power MOSFET RoHS COMPLIANT PowerPAK SO-8 6.15 mm S 1 2 3 S S 5.15 mm S G 4 G D 8 7 6 5 D D D Bottom View Ordering Information: Si7469DP-T1-E3 (Lead (Pb)-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e Symbol VDS VGS ID Limit - 80 ± 20 - 28a - 28a - 10.2b, c - 8.1b, c - 40 - 28a - 4.3b, c - 45 100 83 53 5.2b, c 3.3b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 19 1.2 Maximum 24 1.5 Unit °C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the...