SI7495DP

Si7495DP New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0065 @ VGS = - 4.5 V - 12 0.008 @ VGS = - 2.5 V 0.011 @ VGS = - 1.8 V FEATURES ID (A) - 21 - 19 - 16 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Load Switch PowerPAK SO-8 S 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G D P-Channel MOSFET Bottom View Ordering Information: Si7495DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State - 12 "8 Unit V - 21 - 17 - 50 - 4.5 5 3.2 - 55 to 150 - 13 - 10 A - 1.6 1.8 1.1 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72277 S-31417—Rev. A, 07-Jul-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 20 54 1.7 Maximum 25 68 2.2 Unit _C/W 1 Si7495DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS...