www.vishay.com
Si7748DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) 0.0048 at VGS = 10 V 0.0066 at VGS = 4.5 V
ID (A) a 50 50
Qg (TYP.) 27.8 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
FEATURES • SkyFETTM monolithic TrenchFET® power
MOSFET and Schottky diode
• 100 % Rg and UIS tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Notebook - Vcore low-side
D
6.15 mm
1
T.
N-Channel MOSFET
www.vishay.com
Si7748DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) 0.0048 at VGS = 10 V 0.0066 at VGS = 4.5 V
ID (A) a 50 50
Qg (TYP.) 27.8 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
FEATURES • SkyFETTM monolithic TrenchFET® power
MOSFET and Schottky diode
• 100 % Rg and UIS tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Notebook - Vcore low-side
D
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information: Si7748DP-T1-GE3 (lead (Pb)-free and halogen-free)
Schottky Diode G
N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT 30 ± 20 50 a 50 a
23.5 b, c 18.6 b, c
150 50 a 4.3 b, c 30 45 56 31 4.8 b, c 3 b, c -55 to 150 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYPICAL
MAXIMUM
UNIT
Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain)
t .