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SI7772DP Datasheet

Part Number SI7772DP
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SI7772DP DatasheetSI7772DP Datasheet (PDF)

www.DataSheet.co.kr New Product Si7772DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.013 at VGS = 10 V 0.0165 at VGS = 4.5 V ID (A) 35.6a 31.6 Qg (Typ.) 8.3 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D.

  SI7772DP   SI7772DP






N-Channel MOSFET

www.DataSheet.co.kr New Product Si7772DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.013 at VGS = 10 V 0.0165 at VGS = 4.5 V ID (A) 35.6a 31.6 Qg (Typ.) 8.3 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm • Notebook System Power - Low Side D G N-Channel MOSFET S Schottky Diode Bottom View Ordering Information: Si7772DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 30 ± 20 35.6a 28.5 12.9b, c 10.3b, c 50 27 3.5b, c 15 11.25 29.8 19 3.9b, c 2.5b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Maximum Junction-to-Case (Drain) Junction-to-Ambientb, f t ≤ 10 s Steady State S.


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