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SI7774DP Datasheet

Part Number SI7774DP
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description N-Channel MOSFET
Datasheet SI7774DP DatasheetSI7774DP Datasheet (PDF)

www.DataSheet.co.kr New Product Si7774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0038 at VGS = 10 V 0.0047 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 21.5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G .

  SI7774DP   SI7774DP






N-Channel MOSFET

www.DataSheet.co.kr New Product Si7774DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0038 at VGS = 10 V 0.0047 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 21.5 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm • VRM, POL, Server • Notebook - Low-Side D G N-Channel MOSFET S Schottky Diode Bottom View Ordering Information: Si7774DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C d, e Symbol VDS VGS Limit 30 ± 20 60a 60a 27b, c 21b, c 80 60a 8b, c 40 80 48 31 5.0b, c 3.2b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) b, f t  10 s Steady State Symbol Rt.


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