www.DataSheet.co.kr
New Product
Si7774DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0038 at VGS = 10 V 0.0047 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 21.5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
.
N-Channel MOSFET
www.DataSheet.co.kr
New Product
Si7774DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0038 at VGS = 10 V 0.0047 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 21.5 nC
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
PowerPAK® SO-8
APPLICATIONS
6.15 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
5.15 mm
• VRM, POL, Server • Notebook - Low-Side
D
G N-Channel MOSFET S
Schottky Diode
Bottom View Ordering Information: Si7774DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
d, e
Symbol VDS VGS
Limit 30 ± 20 60a 60a 27b, c 21b, c 80 60a 8b, c 40 80 48 31 5.0b, c 3.2b, c - 55 to 150 260
Unit V
Continuous Drain Current (TJ = 150 °C)
ID
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
IDM IS IAS EAS
A
mJ
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain)
b, f
t 10 s Steady State
Symbol Rt.