SI7792DP

www.DataSheet.co.kr New Product Si7792DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0021 at VGS = 10 V 0.0026 at VGS = 4.5 V ID (A)a 60 60 Qg (Typ.) 41 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition SkyFET™ Monolithic TrenchFET® Gen III Power MOSFET and Schottky Diode 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 6.15 mm S 1 2 3 S S 5.15 mm APPLICATIONS Low Side in Vcore, System and Memory - Notebook PCs D G 4 D 8 7 6 5 D D D G N-Channel MOSFET S Schottky Diode Bottom View Ordering Information: Si7792DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L =0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 30 ± 20 60a 60a 40.6b, c 32.5b, c 100 60a 5.6b, c 50 125 104 66.6 6.25b, c 4.0b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter Maximum Maximum Junction-to-Case (Drain) Junction-t...