SI9925DY

www.DataSheet4U.com Si9925DY Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.05 @ VGS = 4.5 V 20 0.06 @ VGS = 3.0 V 0.08 @ VGS = 2.5 V ID (A) 5.0 4.2 3.6 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si9925DY Si9925DY-T1 (with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS Symbol VDS VGS Limit 20 "12 5.0 4.0 48 1.7 2 1.3 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70145 S-03950—Rev. N, 26-May-03 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 Si9925DY Vishay Siliconix Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 10 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 70_C VDS w 5 V, VGS = 5 V VGS = 7.2 V, ID = 5.0 A VGS =...