Elektronische Bauelemente
SID05N10
5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant P...
Elektronische Bauelemente
SID05N10
5A , 100V , RDS(ON) 170 mΩ N-Channel Enhancement Mode Power
MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen-free
DESCRIPTION
The SID05N10 provide the designer with the best combination of fast switching, The TO-251 package is universally preferred for all commercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment.
TO-251
FEATURES
Low On-resistance Fast Switching Speed Low-
voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel
MARKING:
05N10
Date code
1
Gate
2
Drain
3
Source
A B
GE
K F
C D
H
MJ
P
REF.
A B C D E F
Millimeter Min. Max.
6.40 6.80 5.20 5.50 2.20 2.40 0.45 0.55 6.80 7.20 7.20 7.80
REF.
G H J K M P
Millimeter Min. Max.
5.40 5.80 0.90 1.50
2.30 0.60 0.90 0.50 0.70 0.45 0.60
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Current1 Total Power Dissipation @ TC = 25°C Thermal Resistance Junction-case Thermal Resistance Junction-ambient
TC=25°C TC=100°C
Linear Derating Factor Operating Junction & Storage temperature
Symbol VDS VGS
ID
IDM PD RθJC RθJA
TJ, TSTG
Ratings 100 ±20 5 3.75 20 20 6.25 110 0.16
-55~150
Unit V V A A A W
°C / W °C / W W / °C
°C
http://www.SeCoSGmbH.com/
26-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SID05N10
5A , 100V , RDS(ON) 17...