Power MOSFET. SID05N10 Datasheet

SID05N10 Datasheet PDF


Part Number

SID05N10

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

SeCoS

Total Page 4 Pages
Datasheet
Download SID05N10 Datasheet


SID05N10
Elektronische Bauelemente
SID05N10
5A , 100V , RDS(ON) 170 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen-free
DESCRIPTION
The SID05N10 provide the designer with the best
combination of fast switching, The TO-251 package is
universally preferred for all commercial-industrial surface
mount applications. The device is suited for charger,
industrial and consumer environment.
TO-251
FEATURES
Low On-resistance
Fast Switching Speed
Low-voltage drive (4V)
Wide SOA (safe operating area)
Easily designed drive circuits
Easy to parallel
MARKING:
05N10
Date code
1
Gate
2
Drain
3
Source
A
B
GE
K
F
C
D
H
MJ
P
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
2.20 2.40
0.45 0.55
6.80 7.20
7.20 7.80
REF.
G
H
J
K
M
P
Millimeter
Min. Max.
5.40 5.80
0.90 1.50
2.30
0.60 0.90
0.50 0.70
0.45 0.60
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation @ TC = 25°C
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TC=25°C
TC=100°C
Linear Derating Factor
Operating Junction & Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJC
RθJA
TJ, TSTG
Ratings
100
±20
5
3.75
20
20
6.25
110
0.16
-55~150
Unit
V
V
A
A
A
W
°C / W
°C / W
W / °C
°C
http://www.SeCoSGmbH.com/
26-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4

SID05N10
Elektronische Bauelemente
SID05N10
5A , 100V , RDS(ON) 170 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Test Conditions
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BVDSS
100
-
-
V VGS=0, ID=1mA
VGS(th)
1
- 2.5 V VDS=10V, ID=1mA
Forward Trans-conductance
gfs - 4 - S VDS =10V, ID =2.5A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current TJ=25°C
IDSS
-
- 10 uA VDS=100 V, VGS=0
Static Drain-Source On-Resistance2
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
RDS(ON)
-
-
- 170
VGS=10 V, ID=2.5A
m
- 200
VGS=4V, ID=2.5A
Td(on)
Tr
Td(off)
Tf
-9-
- 9.4 -
- 26.8 -
- 2.6 -
VDD=30V
ID=1A
nS VGS=10 V
RG=6
RL=30
Input Capacitance
Ciss - 975 -
Output Capacitance
Coss - 38 -
Reverse Transfer Capacitance
Crss - 27 -
Source-Drain Diode
Forward On Voltage2
VSD
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse width300us, duty cycle2%
.
-
- 1.5
VGS=0
pF VDS=25V
f =1 MHz
V IS=5A, VGS=0 ,TJ=25 °C
http://www.SeCoSGmbH.com/
26-Dec-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4





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