SIDC10D120H8

SIDC10D120H8 Fast switching diode chip in Emitter Controlled Technology Features:  1200V Emitter Controlled technology 120 µm chip  Soft, fast switching  Low reverse recovery charge  Small temperature coefficient  Qualified according to JEDEC for target applications Recommended for:  Power modules and discrete devices Applications:  SMPS, resonant applications, drives Chip Type VR IFn SIDC10D120H8 1200V 15A Die Size 3.2 x 3.2 mm2 Package sawn on foil Mechanical Parameters Die size Area total 3.2 x 3.2 10.24 mm2 Anode pad size 2.48 x 2.48 Thickness 120 µm Wafer size 200 mm Max. possible chips per wafer 2676 Passivation frontside Photoimide Pad metal Backside metal 3200 nm AlSiCu Ni Ag – system To achieve a reliable solder connection it is strongly recommended not to consume the Ni layer completely during production process Die bond Electrically conductive epoxy glue and soft solder Wire bond Al,  500 µm Reject ink dot size  0.65 mm; max 1.2 mm Storage environment for original and sealed MBB bags for open MBB bags Ambient atmosphere air, Temperature 17 °C – 25 °C, < 6 months Acc. to IEC62258-3: Atmosphere > 99% Nitrogen or inert gas, Humidity < 25% RH, Temperature 17 °C – 25 °C, < 6 months Edited by INFINEON Technologies, L4054C, Rev 2.1, 14.10.2015 SIDC10D120H8 Maximum Ratings Parameter Symbol Repetitive peak reverse voltage VRRM Continuous forward current IF Maximum repetitive forward current²) IFR M Junction temperature ...