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SIF7N65C MOSFET Datasheet PDFPOWER MOSFET |
Part Number | SIF7N65C |
---|---|
Description | N-CHANNEL POWER MOSFET |
Feature | Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF7N65C ●: RoHS ●FEATURES:■LOW THERMAL RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT ●: ●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY ●(TC=25°C) ●Absolute Maximum Ratings(Tc=25°C) TO-220/220FP/262/263 PARAMETER - Drain-source Voltage - gate-source Voltage Continuous Drain Current TC=25℃ Continuous Drain Current TC=100℃ SYMBOL VDS VGS ID ID VALUE 650 ±30 7.0 3.2 UNIT V V A A VDS=650V RDS(ON)=1.4Ω ID=7.0A Drain Current -Pul. |
Manufacture | SI Semiconductors |
Datasheet |
Part Number | SIF7N65C |
---|---|
Description | N-CHANNEL POWER MOSFET |
Feature | Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF7N65C ●: RoHS ●FEATURES:■LOW THERMAL RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE ■RoHS COMPLIANT ●: ●APPLICATION: ■ELECTRONIC BALLAST ■ELECTRONIC TRANSFORMER ■SWITCH MODE POWER SUPPLY ●(TC=25°C) ●Absolute Maximum Ratings(Tc=25°C) TO-220/220FP/262/263 PARAMETER - Drain-source Voltage - gate-source Voltage Continuous Drain Current TC=25℃ Continuous Drain Current TC=100℃ SYMBOL VDS VGS ID ID VALUE 650 ±30 7.0 3.2 UNIT V V A A VDS=650V RDS(ON)=1.4Ω ID=7.0A Drain Current -Pul. |
Manufacture | SI Semiconductors |
Datasheet |
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