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SIGC109T120R3L
IGBT Chip
FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-o...
www.DataSheet4U.com
SIGC109T120R3L
IGBT Chip
FEATURES: 1200V Trench + Field Stop technology 120µm chip low turn-off losses short tail current positive temperature coefficient easy paralleling
3
This chip is used for: power module
C
Applications: drives
G
E
Chip Type SIGC109T120R3L
VCE
ICn
Die Size 10.47 x 10.44 mm2
Package sawn on foil
Ordering Code Q67050A4210-A101
1200V 100A
MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.47 x 10.44 8.95 x 8.32 1.14 x 1.14 109.3 / 85.8 120 150 90 124 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd
2
mm
Edited by INFINEON Technologies AI PS DD HV3, L7681B, Edition 2, 04.09.03
SIGC109T120R3L
MAXIMUM RATINGS: Parameter Collector-emitter
voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter
voltage Operating junction and storage temperature
1)
Symbol V CE IC Icpuls V GE Tj, Ts t g
Value 1200
1)
Unit V A A V °C
300 ±20 -55 ... +150
depending on thermal properties of a...