SIGC12T120E
IGBT3 Power Chip
Features: 1200V Trench + Field Stop technology low turn-off losses short tail curre...
SIGC12T120E
IGBT3 Power Chip
Features: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type SIGC12T120E
VCE 1200V
IC 8A
Die Size 3.54 x 3.5 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
3.54 x 3.5
2.028 x 2.028 1.107 x 0.702
mm2
12.4
140 µm
200 mm
2213
Photoimide
3200 nm AlSiCu
Ni Ag –system suitable for epoxy and soft solder die bonding
Electrically conductive glue or solder
Al, <500µm
0.65mm ; max 1.2mm
Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7621M, L7621T, L7621E, Rev 2.3, 27.06.2014
SIGC12T120E
Maximum Ratings Parameter
Symbol
Value
Unit
Collector-Emitter
voltage, Tvj =25 C DC collector current, limited by Tvj max
VCE IC
1200
1)
Pulsed collector current, tp limited by Tvj max
Ic,puls
24
Gate emitter
voltage
VGE
20
Junction temperature range Operating junction temperature Short circuit data 2 ) VGE = 15V, VCC = 900V, Tvj = 150°C
Tvj Tvj tSC
-40 ... +175 -40...+150
10
Reverse bias safe operating area 2 ) (RBSOA) 1 ) d...