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SIGC158T170R3 IGBT Datasheet PDF

IGBT

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Part Number SIGC158T170R3
Description IGBT
Feature www.
DataSheet4U.
com Preliminary SIGC15 8T170R3 IGBT Chip FEATURES:
• 1700V T rench + Field Stop technology
• low t urn-off losses
• short tail current positive temperature coefficient
• easy paralleling 3 This chip is used for:
• power module C Applications:
• drives G E Chip Type SIGC158T17 0R3 VCE ICn Die Size 12.
57 x 12.
57 m m2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANIC AL PARAMETER: Raster size Emitter pad s ize Gate pad size Area total / active T hickness Wafer size Flat position Max.
p ossible chips per wafer Passivation fro ntside Emitter metalization .
Manufacture Infineon Technologies
Datasheet
Download SIGC158T170R3 Datasheet

SIGC158T170R3

 

 

 


 

 

 

Part Number SIGC158T170R3E
Description IGBT
Feature SIGC158T170R3E IGBT3 Power Chip Featur es:  1700V Trench & Field Stop techn ology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules App lications:  drives Chip Type VCE IC Die Size SIGC158T170R3E 1700V 125A 12.
57 x 12.
57 mm2 C G E Package sawn on foil Mechanical Parameters Raster s ize Emitter pad size (incl.
gate pad) G ate pad size Area total Thickness Wafer size Max.
possible chips per wafer Pass ivation frontside Pad metal Backside me tal Die bond Wire bond Reject ink dot s ize Recommended storage envi .
Manufacture Infineon
Datasheet
Download SIGC158T170R3E Datasheet

SIGC158T170R3E

 

 

 


 

 

 

Part Number SIGC158T170R3
Description IGBT
Feature www.
DataSheet4U.
com Preliminary SIGC15 8T170R3 IGBT Chip FEATURES:
• 1700V T rench + Field Stop technology
• low t urn-off losses
• short tail current positive temperature coefficient
• easy paralleling 3 This chip is used for:
• power module C Applications:
• drives G E Chip Type SIGC158T17 0R3 VCE ICn Die Size 12.
57 x 12.
57 m m2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANIC AL PARAMETER: Raster size Emitter pad s ize Gate pad size Area total / active T hickness Wafer size Flat position Max.
p ossible chips per wafer Passivation fro ntside Emitter metalization .
Manufacture Infineon Technologies
Datasheet
Download SIGC158T170R3 Datasheet

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