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SIGC158T170R3 IGBT Datasheet PDFIGBT IGBT |
　
　
　
| Part Number | SIGC158T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com Preliminary SIGC15 8T170R3 IGBT Chip FEATURES: • 1700V T rench + Field Stop technology • low t urn-off losses • short tail current â €¢ positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC158T17 0R3 VCE ICn Die Size 12. 57 x 12. 57 m m2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANIC AL PARAMETER: Raster size Emitter pad s ize Gate pad size Area total / active T hickness Wafer size Flat position Max. p ossible chips per wafer Passivation fro ntside Emitter metalization . |
| Manufacture | Infineon Technologies |
| Datasheet |
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| Part Number | SIGC158T170R3E |
|---|---|
| Description | IGBT |
| Feature | SIGC158T170R3E
IGBT3 Power Chip
Featur es: ï‚· 1700V Trench & Field Stop techn ology ï‚· low turn-off losses ï‚· short tail current ï‚· positive temperature coefficient ï‚· easy paralleling
This chip is used for: ï‚· power modules
App lications: ï‚· drives
Chip Type
VCE
IC
Die Size
SIGC158T170R3E 1700V 125A 12. 57 x 12. 57 mm2 C G E Package sawn on foil Mechanical Parameters Raster s ize Emitter pad size (incl. gate pad) G ate pad size Area total Thickness Wafer size Max. possible chips per wafer Pass ivation frontside Pad metal Backside me tal Die bond Wire bond Reject ink dot s ize Recommended storage envi . |
| Manufacture | Infineon |
| Datasheet |
 |
　
　
　
　
　
　
| Part Number | SIGC158T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com Preliminary SIGC15 8T170R3 IGBT Chip FEATURES: • 1700V T rench + Field Stop technology • low t urn-off losses • short tail current â €¢ positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC158T17 0R3 VCE ICn Die Size 12. 57 x 12. 57 m m2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANIC AL PARAMETER: Raster size Emitter pad s ize Gate pad size Area total / active T hickness Wafer size Flat position Max. p ossible chips per wafer Passivation fro ntside Emitter metalization . |
| Manufacture | Infineon Technologies |
| Datasheet |
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