SIGC158T170R3

www.DataSheet4U.com Preliminary SIGC158T170R3 IGBT Chip FEATURES: 1700V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC158T170R3 VCE ICn Die Size 12.57 x 12.57 mm2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 12.57 x 12.57 4 x ( 5.05 x 2.32 ) 4 x ( 5.05 x 2.54 ) 1.12 x 1.12 158 / 124.8 190 150 90 86 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L 7801A, Edition 1, 02.06.2003 8:30 Preliminary SIGC158T170R3 MAXIMUM RATINGS: Parameter Collector-emitter voltage DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1700 125 250 ±20 -55 ... +150 Unit V A A V °C STATIC CHARACTERISTICS (teste...