SIGC18T60SNC

www.DataSheet4U.com SIGC18T60SNC IGBT Chip in NPT-technology FEATURES: 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling C This chip is used for: SGP20N60 Applications: drives G E Chip Type SIGC18T60SNC SIGC18T60SNC VCE 600V 600V ICn 20A 20A Die Size 4.3 x 4.3 mm2 4.3 x 4.3 mm2 Package sawn on foil unsawn Ordering Code Q67041-S2856A001 Q67041-S2856A002 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.3 x 4.3 18.49 / 14.3 2.48 x 2.98 0.7 x 1.08 100 150 270 796 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7242-S, Edition 2, 28.11.2003 SIGC18T60SNC MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 600 1) Unit V A A V °C 60 ±20 -55 ... +150 depending on thermal properties of assembly S...