SIGC18T60UN

SIGC18T60UN High Speed IGBT Chip in NPT-technology FEATURES: low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling This chip is used for: SGP20N60HS Applications: Welding PFC UPS C G E Chip Type SIGC18T60UN VCE ICn Die Size 600V 20A 4.3 x 4.3 mm2 Package Ordering Code sawn on foil Q67050-A4222A101 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.3 x 4.3 mm2 18.5 / 14.2 2.986 x 2.486 1.078 x 0.696 100 µm 150 mm 270 deg 796 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in ...