SIGC25T120C

www.DataSheet4U.com Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 200µm chip positive temperature coefficient easy paralleling This chip is used for: BUP 213 C Applications: drives G E Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package Ordering Code C67078-A4674sawn on foil A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2 x ( 2.18 x 1.6 ) 1.09 x 0.68 25.9 / 18.7 180 150 270 555 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7141-M, Edition 1, 24.01.02 Preliminary SIGC25T120C MAXIMUM RATINGS: Parameter Collector-emitter voltage DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature Symbol VCE IC Icpuls VGE Tj, Tstg Value 1200 32 64 ±20 -55 ... +150 Unit V A A V °C STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified: Value Parameter Collector-emitter breakdown voltage Collector-em...