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SIGC25T60NC IGBT Datasheet PDFIGBT IGBT |
　
　
　
| Part Number | SIGC25T60NC |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC25T60NC IGBT Ch ip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • pos itive temperature coefficient • easy paralleling C This chip is used for: â €¢ IGBT Modules Applications: • drive s G E Chip Type SIGC25T60NC VCE 600 V ICn 30A Die Size 4. 5 x 5. 71 mm2 Pa ckage sawn on foil Ordering Code Q6705 0-A4143A001 MECHANICAL PARAMETER: Rast er size Area total / active Emitter pad size Gate pad size Thickness Wafer siz e Flat position Max. possible chips per wafer Passivation frontside Emitter met allization Collector metallization Die bond Wire bond Reject Ink D . |
| Manufacture | Infineon Technologies |
| Datasheet |
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| Part Number | SIGC25T60NC |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC25T60NC IGBT Ch ip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • pos itive temperature coefficient • easy paralleling C This chip is used for: â €¢ IGBT Modules Applications: • drive s G E Chip Type SIGC25T60NC VCE 600 V ICn 30A Die Size 4. 5 x 5. 71 mm2 Pa ckage sawn on foil Ordering Code Q6705 0-A4143A001 MECHANICAL PARAMETER: Rast er size Area total / active Emitter pad size Gate pad size Thickness Wafer siz e Flat position Max. possible chips per wafer Passivation frontside Emitter met allization Collector metallization Die bond Wire bond Reject Ink D . |
| Manufacture | Infineon Technologies |
| Datasheet |
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