SIGC25T60UN

www.DataSheet4U.com SIGC25T60UN High Speed IGBT Chip in NPT-technology FEATURES: low Eoff 600V NPT technology 100µm chip short circuit prove positive temperature coefficient easy paralleling This chip is used for: SGP30N60HS Applications: Welding PFC UPS C G E Chip Type SIGC25T60UN VCE 600V ICn 30A Die Size 4.5 x 5.71 mm2 Package sawn on foil Ordering Code Q67041-A4667A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.5 x 5.71 25.7 / 20.7 2x( 2.18x1.58 ) 1.08 x 0.68 100 150 90 566 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm 2 mm deg Edited by INFINEON Technologies AI PS DD HV3, L 7262-U, Edition2, 28.11.2003 SIGC25T60UN MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 600 1) Unit V A A V °C 90 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTIC...