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SIGC41T120R3 Datasheet

Part Number SIGC41T120R3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC41T120R3 DatasheetSIGC41T120R3 Datasheet (PDF)

www.DataSheet4U.com SIGC41T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC41T120R3 VCE 1200V ICn 35A Die Size 6.5 x 6.37 mm2 Package sawn on foil Ordering Code Q67050A4105-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat p.

  SIGC41T120R3   SIGC41T120R3






Part Number SIGC41T120R3LE
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet SIGC41T120R3 DatasheetSIGC41T120R3LE Datasheet (PDF)

IGBT TRENCHSTOPTM IGBT3 Chip SIGC41T120R3LE Data Sheet Industrial Power Control SIGC41T120R3LE Table of Contents Features and Applications..3 Mechanical Parameters..3 Maximum Ratings .4 Static and Electrical Characteristics 4 Further Electrical Characteristics 5 Chip Drawing.....

  SIGC41T120R3   SIGC41T120R3







Part Number SIGC41T120R3L
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC41T120R3 DatasheetSIGC41T120R3L Datasheet (PDF)

www.DataSheet4U.com SIGC41T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC41T120R3L VCE 1200V ICn 35A Die Size 6.5 x 6.37 mm2 Package sawn on foil Ordering Code Q67050A4207-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total .

  SIGC41T120R3   SIGC41T120R3







Part Number SIGC41T120R3E
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet SIGC41T120R3 DatasheetSIGC41T120R3E Datasheet (PDF)

IGBT3 Power Chip FEATURES:  600V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling SIGC41T120R3E This chip is used for:  power module Applications:  drives C G E Chip Type VCE IC SIGC41T120R3E 1200V 35A Die Size 6.5 x 6.37 mm2 Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation fronts.

  SIGC41T120R3   SIGC41T120R3







IGBT

www.DataSheet4U.com SIGC41T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC41T120R3 VCE 1200V ICn 35A Die Size 6.5 x 6.37 mm2 Package sawn on foil Ordering Code Q67050A4105-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 6.37 4.992 x 4.898 1.139 x 1.139 41.4 / 30.1 140 150 180 350 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L7651A, Edition 2, 04.09.2003 SIGC41T120R3 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 105 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on.


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