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SIGC42T120CL Datasheet

Part Number SIGC42T120CL
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC42T120CL DatasheetSIGC42T120CL Datasheet (PDF)

www.DataSheet4U.com Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module BSM25GD120DLC E3224 Applications: • drives G C E Chip Type SIGC42T120CL SIGC42T120CL VCE 1200V 1200V ICn 25A 25A Die Size 6.59 x 6.49 mm2 6.59 x 6.49 mm2 Package Ordering Code C67078-A4675sawn on foil A001 C67078-A4675unsawn A002 MECHAN.

  SIGC42T120CL   SIGC42T120CL






Part Number SIGC42T120CS2
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC42T120CL DatasheetSIGC42T120CS2 Datasheet (PDF)

www.DataSheet4U.com SIGC42T120CS2 IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type SIGC42T120CS2 VCE 1200V ICn 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code Q67050A4338-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area .

  SIGC42T120CL   SIGC42T120CL







Part Number SIGC42T120CS
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC42T120CL DatasheetSIGC42T120CS Datasheet (PDF)

www.DataSheet4U.com SIGC42T120CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • SGW25N120 C Applications: • drives, SMPS, resonant applications G E Chip Type SIGC42T120CS VCE 1200V ICn 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code Q67050A4048-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area to.

  SIGC42T120CL   SIGC42T120CL







Part Number SIGC42T120CQ
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC42T120CL DatasheetSIGC42T120CQ Datasheet (PDF)

www.DataSheet4U.com SIGC42T120CQ IGBT Chip in Fieldstop -technology FEATURES: • 1200V Fieldstop technology 120µm chip • low turn-off losses • short tail current • positive temperature coefficient This chip is used for: • IGBT Modules Applications: • welding, SMPS, resonant applications C G E Chip Type SIGC42T120CQ VCE 1200V ICn 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code SP0002-04966 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / act.

  SIGC42T120CL   SIGC42T120CL







Part Number SIGC42T120C
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description IGBT
Datasheet SIGC42T120CL DatasheetSIGC42T120C Datasheet (PDF)

IGBT Chip in NPT-technology Features:  1200V NPT technology  low turn-off losses  positive temperature coefficient  easy paralleling SIGC42T120C This chip is used for:  power module BUP 314 Applications:  drives C G E Chip Type SIGC42T120C VCE IC 1200V 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Mechanical Parameter Raster size Emitter pad size Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond .

  SIGC42T120CL   SIGC42T120CL







IGBT

www.DataSheet4U.com Preliminary SIGC42T120CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling This chip is used for: • power module BSM25GD120DLC E3224 Applications: • drives G C E Chip Type SIGC42T120CL SIGC42T120CL VCE 1200V 1200V ICn 25A 25A Die Size 6.59 x 6.49 mm2 6.59 x 6.49 mm2 Package Ordering Code C67078-A4675sawn on foil A001 C67078-A4675unsawn A002 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.59 x 6.49 2 x ( 2.18 x 1.58 ) 1.06 x 0.65 42.8 / 33.5 180 150 90 334 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7151-P, Edition 1, 24.01.02 Preliminary SIGC42T120CL MAXIMUM RATINGS: Parameter Collector-emitter voltage DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature Symbol VCE IC Icpuls VGE Tj, Tstg Value 1200 25 50 ±20 -55 ... +150 Unit V A A V °C STATIC CHARAC.


2007-09-15 : SIG01    SIGC04T60    SIGC04T60G    SIGC06T120CS    SIGC06T60    SIGC06T60G    SIGC07T60NC    SIGC08T60    SIGC08T60R3    SIGC101T170R3   


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