SIGC42T120CS

www.DataSheet4U.com SIGC42T120CS IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 180µm chip low turn-off losses short tail current positive temperature coefficient easy paralleling This chip is used for: SGW25N120 C Applications: drives, SMPS, resonant applications G E Chip Type SIGC42T120CS VCE 1200V ICn 25A Die Size 6.59 x 6.49 mm2 Package sawn on foil Ordering Code Q67050A4048-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.59 x 6.49 2 x (2.18 x 1.58) 1.06 x 0.65 42.8 / 33.5 180 150 180 334 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm 2 mm grd Edited by INFINEON Technologies AI PS DD HV3, L 7151-S, Edition 2, 03.09.2003 SIGC42T120CS MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 75 ±20 -55 ... +150 depending on thermal properties of...