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SIGC42T60UN Datasheet

Part Number SIGC42T60UN
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet SIGC42T60UN DatasheetSIGC42T60UN Datasheet (PDF)

SIGC42T60UN High Speed IGBT Chip in NPT-technology FEATURES: • low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient easy paralleling This chip is used for: • SGW50N60HS Applications: • Welding • PFC • UPS C G E Chip Type SIGC42T60UN VCE ICn Die Size 600V 50A 6.5 x 6.5 mm2 Package Ordering Code sawn on foil SP0001-01820 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position.

  SIGC42T60UN   SIGC42T60UN






IGBT

SIGC42T60UN High Speed IGBT Chip in NPT-technology FEATURES: • low Eoff • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient easy paralleling This chip is used for: • SGW50N60HS Applications: • Welding • PFC • UPS C G E Chip Type SIGC42T60UN VCE ICn Die Size 600V 50A 6.5 x 6.5 mm2 Package Ordering Code sawn on foil SP0001-01820 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.5 x 6.5 mm2 42.25 / 35.6 2x( 3.0x2.85 ) 0.8 x 1.5 100 µm 150 mm 90 deg 334 Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen,.


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