www.vishay.com
SiHA24N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
Thin-Lead TO-220 FULLPAK
D
G...
www.vishay.com
SiHA24N65EF
Vishay Siliconix
E Series Power
MOSFET with Fast Body Diode
Thin-Lead TO-220 FULLPAK
D
G
G DS
S N-Channel
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
700 VGS = 10 V
122 17 36 Single
0.156
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free
FEATURES
Fast body diode
MOSFET using E series
technology
Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Avalanche energy rated (UIS)
Available
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS Telecommunications
- Server and telecom power supplies Lighting
- High-intensity discharge (HID) - Fluorescent ballast lighting Consumer and computing - ATX power supplies Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power supplies (SMPS) Applications using the following topologies - LCC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge
Thin-Lead TO-220 FULLPAK SiHA24N65EF-E3 SiHA24N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage Gate-source
voltage
Continuous drain current (TJ = 150 °C) e
Pulsed drain current a Linear derating factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single p...