www.vishay.com
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. R...
www.vishay.com
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
560 VGS = 10 V
68 17.6 21.8 Single
TO-220AB
TO-220 FULLPAK
0.38 D
FEATURES
Low Figure-of-Merit Ron x Qg
100 % Avalanche Tested
Gate Charge Improved
Trr/Qrr Improved
Compliant to RoHS Directive 2002/95/EC
Note
* Pb containing terminations are not RoHS compliant, exemptions
may apply
S D G D2PAK (TO-263)
GDS
G
GD S
S N-Channel
MOSFET
ORDERING INFORMATION
Package
TO-220AB
SiHP16N50C-E3
Lead (Pb)-free
-
-
D2PAK (TO-263) SiHB16N50C-E3 SiHB16N50CTR-E3 SiHB16N50CTL-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Maximum Power Dissipation
TO220-AB, D2PAK (TO-263) TO-220 FULLPAK
EAS PD
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 16 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case.
TO-220 FULLPAK SiHF16N50C-E3 -
LIMIT 500 ± 30 16 10 40 2 320 250 38
- 55 to + 150 300
UNIT V
A
W/°C mJ W °C
S11-1116...