IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd ...
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
210 58 100 Single
0.15
TO-247AC
D
G
S D G
ORDERING INFORMATION
Package
Lead (Pb)-free
S N-Channel
MOSFET
SnPb
FEATURES
Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
Available
Lower Gate Charge Results in Simpler Drive RoHS*
Requirements
COMPLIANT
Enhanced dV/dt Capabilities Offer Improved Ruggedness
Higher Gate
Voltage Threshold Offers Improved Noise Immunity
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Zero
Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control Applications
TO-247AC IRFP31N50LPbF SiHFP31N50L-E3 IRFP31N50L SiHFP31N50L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Sta...