IRFP440, SiHFP440
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
IRFP440, SiHFP440
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 30 Single
D
FEATURES
500 0.85
Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-247
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
G
S D G S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247 IRFP440PbF SiHFP440-E3 IRFP440 SiHFP440
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
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PARAMETER Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C
SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg
Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Oper...