SIHFU020

www.vishay.com IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.8 11 Single 0.10 DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR020-GE3 Lead (Pb)-free IRFR020PbF SiHFR020-E3 Note a. See device orientation. FEATURES Dynamic dV/dt Rating Surface Mount (IRFR020, SiHFR020) Available in Tape and Reel Fast Switching Ease of Paralleling Simple Drive Requirements Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. DPAK (TO-252) SiHFR020TR-GE3 IRFR020TRPbFa SiHFR020T-E3a IPAK (TO-251) SiHFU020-GE3 IRFU020PbF SiHFU020-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS I...