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SIHFZ10 Datasheet

Part Number SIHFZ10
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SIHFZ10 DatasheetSIHFZ10 Datasheet (PDF)

Power MOSFET IRFZ10, SiHFZ10 Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 11 3.1 5.8 Single 0.20 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Powe.

  SIHFZ10   SIHFZ10






Part Number SIHFZ14S
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SIHFZ10 DatasheetSIHFZ14S Datasheet (PDF)

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 10 V 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single 0.20 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHFZ14S-GE3 IRFZ14SPbF SiHFZ14S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Adva.

  SIHFZ10   SIHFZ10







Part Number SIHFZ14L
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SIHFZ10 DatasheetSIHFZ14L Datasheet (PDF)

IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 10 V 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single 0.20 I2PAK (TO-262) D2PAK (TO-263) D G SD D G S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHFZ14S-GE3 IRFZ14SPbF SiHFZ14S-E3 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Adva.

  SIHFZ10   SIHFZ10







Part Number SIHFZ14
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet SIHFZ10 DatasheetSIHFZ14 Datasheet (PDF)

Power MOSFET IRFZ14, SiHFZ14 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 11 3.1 5.8 Single 0.20 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power .

  SIHFZ10   SIHFZ10







Power MOSFET

Power MOSFET IRFZ10, SiHFZ10 Vishay Siliconix PRODUCT SUMMARY VDS (V) 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 11 3.1 5.8 Single 0.20 TO-220AB D S D G G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFZ10PbF SiHFZ10-E3 IRFZ10 SiHFZ10 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage VDS VGS Continuous Drain Current TC = 25 °C VGS at 10 V TC = 100 °C ID Pulsed Drain Currenta IDM Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive r.


2009-01-10 : M61501FP    GB15B60KD    TH21A    2N5882    FQP3N80C    FQPF3N80C    SIHFZ10    SIHFZ14    SIHFZ34    SIHFZ34L   


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