Power MOSFET
IRFZ20, SiHFZ20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Power
MOSFET
IRFZ20, SiHFZ20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
50 VGS = 10 V
17 9.0 3.0 Single
0.10
TO-220AB
D
S D G
G
S N-Channel
MOSFET
FEATURES
Extremely Low RDS(on) Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Parts Per Million Quality
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The technology has expanded its product base to serve the low
voltage, very low RDS(on)
MOSFET transistor requirements. Vishay’s highly efficient geometry and unique processing have been combined to create the lowest on resistance per device performance. In addition to this feature all have documented reliability and parts per million quality!
The transistor also offer all of the well established advantages of
MOSFETs such as
voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that are operated from low
voltage batteries, such as automotive, portable equipment, etc.
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
TO-220AB IRFZ20PbF SiHFZ20-E3 IRFZ20 SiHFZ20
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source
Voltagea
Gate-Source
Voltagea
Continuous Drain Current Pulsed Drain Currentb
VGS at 10 V
TC = 25...