SIHL530S

Power MOSFET IRL530S, SiHL530S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 100 VGS = 5.0 V 28 Qgs (nC) 3.8 Qgd (nC) 14 Configuration Single 0.16 D2PAK (TO-263) D GD S G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. FEATURES Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Repetitive Avalanche Rated Logic Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. D2PAK (TO-263) SiHL530STRR-GE3a IRL530STRRPbFa SiHL530STR-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currenta VGS at 5 V TC = 25 °C TC = 100...