IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
...
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
60 VGS = 5 V
8.4
Qgs (nC)
3.5
Qgd (nC)
6.0
Configuration
Single
I2PAK (TO-262)
D2PAK (TO-263)
0.20 D
G
SD
D G
S
G
S N-Channel
MOSFET
FEATURES Halogen-free According to IEC 61249-2-21
Definition
Advanced Process Technology
Surface Mount (IRLZ14S, SiHLZ14S)
Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
175 °C Operating Temperature
Fast Switching
Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power
MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power
MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRLZ44L, SiHLZ44L) is available for low-profile applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note a. See device orientation.
D2PAK (TO-...