Power MOSFET
IRLZ34, SiHLZ34
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
60 VGS = 5.0 V
35
...
Power
MOSFET
IRLZ34, SiHLZ34
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC)
60 VGS = 5.0 V
35
Qgs (nC)
7.1
Qgd (nC)
25
Configuration
Single
0.050
D
TO-220AB
S D G
G
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 5 V
TC = 25 °C TC = 100 °C
ID IDM
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
PD dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperatur...