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SIHLZ44S

Vishay Siliconix

Power MOSFET

www.DataSheet.co.kr IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC)...


Vishay Siliconix

SIHLZ44S

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www.DataSheet.co.kr IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 66 12 43 Single D 60 0.028 Halogen-free According to IEC 61249-2-21 Definition Surface Mount Available in Tape and Reel Dynamic dV/dt Rating Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Compliant to RoHS Directive 2002/95/EC FEATURES DESCRIPTION D2PAK (TO-263) G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. D2PAK (TO-263) SiHLZ44STRR-GE3a IRLZ44STRRPbFa SiHLZ44STR-E3a ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHLZ44S-GE3 IRLZ44SPbF SiHLZ44S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDS VGS LIMIT 60 ± 10 50 36 200 1.0 0.02...




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