SIHP16N50C

www.vishay.com SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 VGS = 10 V 68 17.6 21.8 Single TO-220AB TO-220 FULLPAK 0.38 D FEATURES Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested Gate Charge Improved Trr/Qrr Improved Compliant to RoHS Directive 2002/95/EC Note * Pb containing terminations are not RoHS compliant, exemptions may apply S D G D2PAK (TO-263) GDS G GD S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB SiHP16N50C-E3 Lead (Pb)-free - - D2PAK (TO-263) SiHB16N50C-E3 SiHB16N50CTR-E3 SiHB16N50CTL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation TO220-AB, D2PAK (TO-263) TO-220 FULLPAK EAS PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 , IAS = 16 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case. TO-220 FULLPAK SiHF16N50C-E3 - LIMIT 500 ± 30 16 10 40 2 320 250 38 - 55 to + 150 300 UNIT V A W/°C mJ W °C S11-1116...