SII100N06

SII100N06 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com TC = 25oC, unless otherwise specified Conditions Values 600 130(100) 200 445 _ +20 100 200 1.25 2500 Absolute Maximum Ratings Symbol Units V A A W V A A As V 2 IGBT Wechselrichter/ IGBT Inverter VCES IC TC= 25(70)oC ICRM TC= 70oC, tP =1ms Ptot TC= 25oC, Tvj= 150oC VGES Diode Wechselrichter/ Diode Inverter IF IFRM 2 tP =1ms VR=0V, tP =10ms; TVj=125oC It Module Isolation/ Module Isolation VISOL RMS, f=50Hz, t=1min, NTC connect to Baseplate Sirectifier R SII100N06 NPT IGBT Modules Characteristics Symbol Conditions IGBT Wechselrichter/ IGBT Inverter VGEth VGE = VCE, IC =1.5mA ICES VGE = 0; VCE = 600V, Tj = 25(125)oC IGES VCE=0; VGE=20V VCE(sat) Cies Cres IC =100A; VGE = 15V; Tj = 25(125)oC under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 1(1000) max. 6.5 500 400 Units V uA nA V nF nH A 1.95(2.2) 2.45(-) 4.3 0.4 40 450 LCE o www.DataSheet4U.com Isc tP 10uS, VGE 15V, Tvj = 125 C , Vcc = 360V under following conditions: td(on) VCC = 300V, IC = 100A tr RGon = RGoff =2.2 , , Tj = 25(125)oC td(off) VGE = ± 15V tf 25(26) 10(11) 130(150) 20(30) 1.0(2.9) 1.0 0.28 ns ns ns ns mJ m K/W Eon(Eoff) RCC'+EE' Tj = 25(125)oC, LS = 15nH RthJC Diode Wechselrichter/ Diode Inverter under following condition VF IF = 100A; VGE = 0V; Tj = 25(125)oC IRM IF = 100A; Tj = 25(125)oC Qr -di/dt = 4400A/us Erec VGE = -10V, VR=300V RthJC RthCK TVJ TVJM Tst...