New Product
N-Channel 20 V (D-S) MOSFET
SiJ420DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.0026 at V...
New Product
N-Channel 20 V (D-S)
MOSFET
SiJ420DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 20
RDS(on) (Ω) 0.0026 at VGS = 10 V 0.0032 at VGS = 4.5 V
ID (A)a, g 50 50
Qg (Typ.) 28.7 nC
PowerPAK® SO-8L Single
6.15 mm
5.13 mm
D
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power
MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS POL OR-ing DC/DC
D
4 G
3 S
2 S
1 S
Ordering Information: SiJ420DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
IAS EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
G
S N-Channel
MOSFET
Limit 20 ± 20 50g 50g
32b, c 25.3b, c
80 50g 4.3b, c 30 45 62.5 40 4.8b, c 3.0b, c - 55 to 150 260
Unit V
A
mJ W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t ≤ 10 s Steady State
RthJA RthJC
22 1.4
26 °C/W
2.0
Notes:
a. Based on TC = 25 °C. b. Surface moun...