SIL2301

Features TrenchFET Power MOSFET Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) SIL2301 Dual P-Channel MOSFET Maximum Ratings Operating Junction Temperature Range : -55oC to +150oC Storage Temperature Range: -55oC to +150oC Maximum Thermal Resistance: 100oC/W Junction to Ambient Parameter Symbol Rating Unit Drain -source Voltage Gate -Source Voltage VDS -20V V VGS ±8 V Drain Current-Continuous Drain Current-Pulse(Note 2) Power Dissipation ID -2.3 A IDM -10 A PD 1.25 W Internal Structure D1 S1 D2 6 5 4 1 G1 2 S2 3 G2 Marking: S1 SOT23-6L G 654 1 23 BC A H K M J D L DIMENSIONS DIM INCHES MM MIN MAX MIN MAX A 0.012 0.020 0.30 0.50 B 0.051 0.070 1.30 1.80 C 0.087 0.126 2.20 3.20 D 0.037 0.95 G 0.074 1.90 H 0.106 0.122 2.70 3.10 J 0.002 0.006 0.05 0.15 K 0.030 0.051 0.75 1.30 L 0.012 0.024 0.30 0.60 M 0.003 0.008 0.08 0.22 NOTE TYP. TYP. Rev.3-3-09182019 1/4 MCCSEMI.COM SIL2301 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250µA Gate-Threshold Voltage(Note 1) VGS(th) VDS=VGS, ID=-250µA Gate-Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistance(Note 1) R...