SIM100D06AV1

Preliminary SIM100D06AV1 VCES = 600V Ic= 100A VCE(ON) typ. = 1.5V @Ic= 100A “HALF-BRIDGE” IGBT MODULE Feature ▪ design technology ▪ Low VCE (sat) ▪ Low Turn-off losses ▪ Short tail current for over 20KHz www.DataSheet4U.com Applications ▪ Motor controls ▪ VVVF inverters ▪ Inverter-type welding MC over 18KHZ ▪ SMPS, Electrolysis ▪ UPS/EPS, Robotics Absolute Maximum Ratings @ Tj=25 Symbol VCES VGES IC ICP IF IFM tp Viso Tj Tstg Weight Md (Per Leg) Package : V1 Condition Ratings 600 20 Parameter Collector-to-Emitter Voltage Gate emitter voltage Continuous Collector Current Pulsed collector current Diode Continuous Forward Current Diode Maximum Forward Current Short circuit test, VGE = 15V, VCC = 360V Isolation Voltage test Junction Temperature Storage Temperature Weight of Module Mounting torque with screw : M5 TC = 80 TC = TC = 80 TC = TC = 150 TC = Unit V V A A A A 100 (130) 200 100 (130) 200 6 (8) 2500 -40 ~ 150 -40 ~ 125 190 2.0 AC @ 1 minute V g N.m Static Characteristics @ Tj = 25 Parameters VCE(ON) VGE(th) ICES IGES VFM RGINT Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop Integrated gate resistor (unless otherwise specified) Min _ Typ 1.50 5.8 Max 1.95 Unit V Test conditions IC = 100A, VGE = 15V VCE = VGE, IC = 4 VGE = 0V, VCE = 600V VCE = 0V, VGE = V 6.5 5.0 400 1.6 2 2.0 V IF = 100A, VGE = 0V Preliminary Electrical Characteristic Values ...