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SIM100D12SV1 Datasheet

Part Number SIM100D12SV1
Manufacturers SemiWell Semiconductor
Logo SemiWell Semiconductor
Description HALF-BRIDGE IGBT
Datasheet SIM100D12SV1 DatasheetSIM100D12SV1 Datasheet (PDF)

Preliminary “HALF-BRIDGE” IGBT Features Applications ▪ rench gate + field stopper, using Infineon chip design ▪ AC & DC Motor controls ▪ 10µs Short circuit capability ▪ VVVF inverters ▪ Low turn-off losses ▪ Optimized for high frequency inverter ▪ Short tail current for over 18KHz Type Welding machines ▪ Positive VCE(on) ▪ High frequency SMPS temperature coefficient ▪ UPS, Robotics SIM100D12SV1 VCES = 1200V Ic = 100A VCE(ON) typ. = 1.7V @ Ic = 100A Absolute Maximum Ratings @ Tc = .

  SIM100D12SV1   SIM100D12SV1






HALF-BRIDGE IGBT

Preliminary “HALF-BRIDGE” IGBT Features Applications ▪ rench gate + field stopper, using Infineon chip design ▪ AC & DC Motor controls ▪ 10µs Short circuit capability ▪ VVVF inverters ▪ Low turn-off losses ▪ Optimized for high frequency inverter ▪ Short tail current for over 18KHz Type Welding machines ▪ Positive VCE(on) ▪ High frequency SMPS temperature coefficient ▪ UPS, Robotics SIM100D12SV1 VCES = 1200V Ic = 100A VCE(ON) typ. = 1.7V @ Ic = 100A Absolute Maximum Ratings @ Tc = 25 (per leg) Package : V1 Symbol Parameter Condition VCES Collector-to-Emitter Voltage VGES Gate emitter voltage IC Continuous Collector Current ICM Pulsed collector current IF Diode Continuous Forward Current IFM Diode Maximum Forward Current TSC Short Circuit Withstand Time Viso Isolation Voltage test Tj Junction Temperature Tstg Storage Temperature Weight Weight of Module Mounting Power Terminal Screw : M5 Torque Terminal connection Screw : M5 VGE = 0V, IC = 500µA TC = 80 TC = 25 TC = 80 TC= AC 1 minute Ratings 1200 ± 20 100(140) 200 100(140) 200 10 2500 -40 ~ 150 -40 ~ 125 190 3.5 3.5 Unit V V A A A A µs V g Nm Nm Preliminary SIM100D12SV1 Electrical Characteristics @ Tj = 25 (unless otherwise specified) Symbol Parameters Min Typ Max Unit Test conditions V(BR)CES Collector-to-Emitter Breakdown Voltage - 1350 1374 VGE = 0V, IC = 200µA VCE(ON) Collector-to-Emitter Saturation Voltage 1.4 1.7 2.1 V IC = 100A, VGE = 15V VGE(th) Gate Threshold Voltag.


2014-11-25 : UCS2915    7806CT    MAX888    SMK1060PS    FF150R12KE3G    FF150R12KS4    FF150R12KS4    FF150R12ME3G    FF150R12MS4G    FF150R12MT4   


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