SIR341ST3F

SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. !Applications Optical control equipment Light source for remote control devices !External dimensions (Units : mm) φ3.8±0.3 φ3.5 φ3.1±0.2 Notes: 1. Unspecified tolerance shall be ±0.2. 2. Dimension in parenthesis are show for reference. !Features 1) Compact (φ3.1mm). 2) High efficiency, high output PO=8.4mW (IF=50mA). 3) Wide radiation angle θ 1/2=±16deg. 4) Peak wavelength well suited to silicon detectors (λP=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 2− 0.5 Min.24 1 (2.5) 2.5±1 2 Max.1 4−0.6 5.2±0.3 1.1 1 Anode 2 Cathode !Absolute maximum ratings (Ta = 25°C) Parameter Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature ∗ Pulse width=0.1msec, duty ratio 1% Symbol IF VR PD IFP∗ Topr Tstg Limits 75 5 100 1.0 −25~+85 −40~+85 Unit mA V mW A °C °C 1/3 SIR-341ST3F Sensors !Electrical and optical characteristics (Ta = 25°C) Parameter Optical output Emitting strength Forward voltage Reverse current Peak light emitting wavelength Spectral line half width Half-viewing angle Pesponse time Cut-off...